Abstract
An explicit charge-based compact model for lightly doped FinFETs is proposed. This design-oriented model is valid and continuous in all operating regimes (subthreshold, linear, and saturation) for channel lengths ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">L</i> ) down to 25 nm, Fin widths ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">W</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Si</sub> ) down to 3 nm, and Fin heights ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">H</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Si</sub> ) down to 50 nm with a single set of parameters. It takes short-channel effects, subthreshold slope degradation, drain-induced barrier lowering, drain saturation voltage with velocity saturation, channel length modulation, and quantum mechanical effects into account.
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