Abstract
A new and simple-to-use method to obtain homogeneous Schottky barrier heights from effective barrier heights and ideality factors that are determined from current-voltage (I-V) characteristics of metal-semiconductor contacts is presented. This approach is justified by a theory of metal-semiconductor interfaces with laterally inhomogeneous distributions of barrier heights. Effective barrier heights and ideality factors were determined from I-V characteristics of Si and GaN Schottky contacts and a linear reduction of the effective barrier heights with increasing ideality factors was always observed. These findings are explained by numerical simulations of inhomogeneous Schottky contacts which are based on theoretical results by Tung [Phys. Rev. B 45, 13509 (1992)]. The homogeneous barrier heights of metal-semiconductor contacts are obtained by a linear extrapolation of the effective barrier heights to nif ≅ 1.01, the value of the ideality factor characteristic for image-force lowering of Schottky barriers only.
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