Abstract
The effect of plasma-enhanced chemical vapour deposition parameters on refractive index and deposition rate of silicon nitride films is investigated. Usually, this kind of study is performed in a laboratory system. In the present work, a horizontal batch system for the simultaneous coating of 100 silicon wafers is used. Using a gas mixture of silane and ammonia as the reactant-gas sources, the effects of the gas flow rate ratio ( R = NH3/SiH4 with the total flow rate constant), pressure, power and temperature on the refractive index and deposition rate were studied and the experimental results are presented and discussed.
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