Abstract
Effect of 60Co γ-ray radiation at room temperature up to a dose of 5∙107 Gy on the parameters of laser-generated plasma ions at the surface of single crystalline silicon and multicomponent silicate glass targets is investigated using time-of-flight mass spectrometer based on an electrostatic energy analyzer. The main impact of the radiation is observed in the charge state of the plasma ions: for small energy ions the charge increases with increasing the radiation dose, whereas the increase in the radiation dose results in the decrease of the charge of high-energy ions. The maximum energy of the ions also decreases with increasing the radiation dose. Effect of point defects created by metal atom inclusions on the absorption properties of silicate glasses is also studied. The defects decrease the resistance of the glasses to optical damage as they become centers of intense light absorption.
Highlights
Defect formation in wide band gap insulators exposed to energetic photons (x-rays, γ-rays, intense ultraviolet radiation) has been a study object of many theoretical and experimental research works in the past
Several theoretical models have been proposed, like the activation of additional precursors resulting in an exponential growth of defects [7]; the activation of the unperturbed matrix that can give rise to growth of defects without saturation [8,9]; and a creation of the E’-centers with concurrent conversion to other defects to recover the initial structure. These processes have been associated with sub-linear dependence of the defect concentration on the irradiation dose [10]
Due to its optical homogeneity and excellent transparence for high-energy photons, fused silica is extensively used for laser applications in inertial confinement fusion (ICF) programs and other high-power laser systems, such as the megajoule class fusion lasers
Summary
Defect formation in wide band gap insulators (such as amorphous SiO2) exposed to energetic photons (x-rays, γ-rays, intense ultraviolet radiation) has been a study object of many theoretical and experimental research works in the past (see Refs. [1, 2] for review). Several theoretical models have been proposed, like the activation of additional precursors resulting in an exponential growth of defects [7]; the activation of the unperturbed matrix that can give rise to growth of defects without saturation [8,9]; and a creation of the E’-centers with concurrent conversion to other defects to recover the initial structure These processes have been associated with sub-linear dependence of the defect concentration on the irradiation dose [10]. Due to its optical homogeneity and excellent transparence for high-energy photons, fused silica is extensively used for laser applications in inertial confinement fusion (ICF) programs and other high-power laser systems, such as the megajoule class fusion lasers Defect formation in these materials is a critical issue, which can occur under different experimental conditions [13,14]. The effect of γ-radiation on the threshold intensity of the laser becomes less pronounced for the higher concentration of the inclusions
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