Abstract

The optical absorption and temperature dependence of photoluminescence (PL) in the temperature range of 10 to 300 K have been measured for Er 3+-doped lead silicate glass. A strong PL band that originates from 4S 13/2→ 4I 15/2 transition centered at 562 nm was observed even at room temperature. A very weak temperature quenching compared with that of Er 3+ in crystal Si and the peak wavelength remaining constant with temperature are the main characteristics of this PL emission band. They are explained by the competition of thermal population effect and multiphonon relaxation between the 4S 3/2 and 2H 11/2 levels of Er 3+.

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