Abstract
The aspect ratio dependent etching of deep trenches in silicon is investigated as a function of polymer deposition rate which, in turn, depends on the C2Cl3F3 content in a SF6C2Cl3F3 gas mixture. The experimental results are compared to computer simulations. A model which takes into account simultaneous ion-enhanced etching and polymer deposition is developed to explain the observed two-dimensional effects such as feature size dependent profile evolution, RIE lag, and inverse RIE lag. Computer program includes different transport mechanisms of ions, reactive neutrals, polymer precursors and some parameters, namely, the angular distributions of species, sticking coefficients, and re-emission functions. The influence of these parameters on aspect ratio dependent etching is considered.
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