Abstract
In Ultra-Thin Body and BOX Fully Depleted Silicon-On-Insulator (UTBB FD-SOI) technology, body biasing can be used to achieve better energy efficiency. We propose a simple Time, Energy, Power (TEP) model based on Ring Oscillators (RO) measurements to predict optimal (V dd ;V bb ) point for complex circuits and validate it against direct experimental measurements. The model predicted Adaptive Forward Body Biasing (A-FBB) energy gain is compared to V dd only methods: supply scaling, Vdd hopping and power gating.
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