Abstract
We provide the first experimental demonstration of optical transmission characteristics of a W1 photonic crystal waveguide in silicon on sapphire at mid infrared wavelength of 3.43 μm. Devices are studied as a function of lattice constant to tune the photonic stop band across the single wavelength of the source laser. The shift in the transmission profile as a function of temperature and refractive index is experimentally demonstrated and compared with simulations. In addition to zero transmission in the stop gap, propagation losses less than 20 dB/cm are observed for group indices greater than 20 below the light line while more than 300 dB/cm propagation losses are observed above the light line, characteristic of the waveguiding behavior of photonic crystal line defect modes.
Highlights
Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics as well as its optical transparency in the near-infrared telecom wavelengths
Ring resonators [1], photonic crystal waveguides (PCWs) [2], photonic crystal (PC) microcavities [3] operating at 1.55 μm have been employed for biosensing
Slow light in PCWs [4] and PC slot waveguides [5, 6] has been used to reduce the optical absorption path length and achieve high detection sensitivity in on-chip optical absorption spectroscopy for the selective detection of volatile organic compounds [4, 5] and greenhouse gases [6] based on unique analyte absorption signatures in the near-infrared
Summary
Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics as well as its optical transparency in the near-infrared telecom wavelengths. Slow light in PCWs [4] and PC slot waveguides [5, 6] has been used to reduce the optical absorption path length and achieve high detection sensitivity in on-chip optical absorption spectroscopy for the selective detection of volatile organic compounds [4, 5] and greenhouse gases [6] based on unique analyte absorption signatures in the near-infrared (nearIR). PCWs and PC slot waveguides in silicon-on-insulator (SOI) (from 1.1 μm to 3.7μm), silicon-on-sapphire (SoS) (from 1.1 μm to 5.5 μm) and free-standing silicon membranes (from 1.1 μm to 8 μm) can serve as the ideal platform for highly sensitive optical absorption spectroscopy on chip. Some devices have been demonstrated in the mid-IR in free-standing silicon platform [18,19,20]. OPOs are relatively expensive and bulky and cannot be used for any realistic sensing system outside the lab [21]
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