Abstract
Structural phase transformation of pure-HfO2 films in higher-k phase (cubic or tetragonal phase) was investigated. HfO2/SiO2/Si stacks were annealed at 600oC under various temperature programs. We found that the peak intensity ratio of the higher-k phase to monoclinic one in XRD was enhanced distinctly by increasing the ramping-up rate of temperature, even though the equilibrium phase at 600oC should be the monoclinic. Additionally, the ratio gradually decreased with extending the annealing time, but the higher-k phase was maintained by annealing after deposition of Si capping-layer on HfO2/SiO2/Si stacks.
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