Abstract
Electrical conduction in undoped LPCVD polycrystalline silicon was examinated at both low and high fields. The physical mechanisms pertinent to the current-voltage (I–V) characteristics were experimentally interrogated. Specially, the localized self heating near grain boundaries that is responsible for nonlinear I–V behavior was further corroborated by the temperature dependence of the resistivity and the high-feld I–V behavior. These data were quantified, based on local Joule heating and a concomitant rise in the sample temperature.
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