Abstract
MEH-PPV (poly[2-methoxy-5-(2 ′-ethyl-hexyloxy)-1,4-phenylene vinylene]) based Schottky diodes have been fabricated and investigated through the analyses of current density–voltage and capacitance–voltage characteristics. Temperature-dependent hole mobility of MEH-PPV is extracted by the space-charge limited conduction (SCLC) model from 300 to 400 K, and the use of the SCLC model is examined in high electric field. The highest measured hole mobility is 0.013 cm 2/Vs at 353 K. The thickness of MEH-PPV in the structures consisting of ITO/MEH-PPV/Al, largely affects the performance of the diodes, and the thinner film displays better device performance. According to capacitance–voltage relations, the effective carrier density and Schottky barrier height of MEH-PPV have been determined to be 2.24 × 10 17 cm −3 and 0.64 eV, respectively.
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