Abstract
We present a theory correlating the excitonic photoluminescence linewidth in quantum wells with the microscopic structure of the interface in the presence of a magnetic field. The interface is described in terms of microscopic fluctuations δ1 and δ2 where δ1 is the local fluctuation in the well width and δ2 is the lateral correlated extent of the fluctuation. We use Lifshitz’s theory of disordered alloys to determine the probability distribution of fluctuations of the well size over the effective extent of the optical probe, namely, the exciton. The line shape is then calculated from this distribution. We have evaluated the fullwidth at half maximum (σ) for both the heavy-hole exciton and the light-hole exciton as a function of the well size and interface parameters δ1 and δ2 in the presence of a magnetic field in GaAs-Al0.3Ga0.7As and In0.53Ga0.47As-InP quantum well structures. We find that for a given set of values of well width and interface parameters, the application of the magnetic field reduces the effective size of the exciton and thus increases the linewidth.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
