Abstract
Exciton dynamics in ZnSe x Te 1- x epilayers (0 < x < 0.4) is studied through the emission decay kinetics at liquid helium temperature. At low concentration ( x < 0.1) the emission contains free exciton lines and several impurity-related bands. The free exciton decay times in these samples are less than 100 ps due to the fast energy transfer to defects and the efficient migration of excitons into the interface region. The increase of Se content up to x ≈ 0.2 causes gradual increase of the exciton luminescence decay times (up to 1.5ns) which exhibits strong variation across the exciton emission band contour. This indicates the onset exciton localization by the compositional fluctuations of the mixed crystal.
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