Abstract
We report on time-resolved measurements on single GaAs quantum dots formed at the interface fluctuation of a $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{Ga}\mathrm{As}$ quantum well. We measure exciton radiative lifetimes as short as $100\phantom{\rule{0.3em}{0ex}}\mathrm{ps}$, demonstrating that monolayer fluctuation quantum dots have larger oscillator strength than any other $\mathit{III}\text{\ensuremath{-}}\mathit{V}$ or $\mathit{II}\text{\ensuremath{-}}\mathit{VI}$ semiconductor quantum dots. Studying various single quantum dots, we demonstrate that the oscillator strength of a quantum dot is controlled by its lateral confinement energy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
