Abstract
Electroluminescence spectra of red GaP light-emitting diodes were investigated. Besides the main emission line hν = 1.845 eV, it was detected the additional short-wave component hν = 2.206 eV the existence of which is connected with donor-acceptor transitions between Zn-Sn pairs. It was observed intensity increase of this line at low currents (I 90 mA) due to the thermal effect. The nature of the spectral lines anomalous broadening was discussed.
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