Abstract
Tunneling transport assisted by the Coulomb interaction of Wannier–Mott exciton is investigated within the framework of the sequential tunneling formalism. The exciton-assisted tunneling (EAT) probability is derived from Bardeen’s transfer Hamiltonian. The EAT-induced current-voltage (I-V) characteristics are evaluated using a set of three-particle rate equations for double-barrier and triple-barrier tunneling structures. We found that the EAT results in additional current at low bias voltages with respect to the resonant tunneling (RT) current. Their offset in the I-V spectra is associated to the exciton binding energy. The current intensity of the electron EAT is dependent on the quantum-well hole density as well as the exciton Bohr radius. Calculated I-V characteristics of electron tunneling via the heavy-hole excitonic states are presented and discussed for typical AlxGa1−xAs/GaAs nanostructures. In particular, the line shape of the EAT I-V spectra is shown to have a fingerprint distinguishable from that of the RT at low temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
