Abstract
We have studied the CW and time-resolved photoluminescence spectra of [001]-(GaAs)n/(AlAs)n (n=8−15) short-period superlattices. The superlattices with n⩽12 are of the type II and the lowest excited state is Xz exciton, while the samples with n⩾13 are type-I materials and the conduction band minimum occurs at Γ. It is found from decay pattern analysis that the significant Xz-Γ mixing occurs only near the direct-indirect crossover and dominantly at an odd number of AlAs monolayers.
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