Abstract
Photoluminescence transients have been studied with picosecond resolution in homoepitaxial GaN layers grown with MOCVD. In the studied samples, with doping concentration in the 10 17 cm −3 range, the free exciton (FE) decay time is short, less than 100 ps, mainly due to capture to the shallow impurities, but also to some extent due to nonradiative transitions at defects. The donor bound exciton (DBE) decay time is also short, <140 ps, indicating some excitation transfer to nonradiative defects. The acceptor bound exciton (ABE) has a well-defined decay time of 800 ps below 15 K. The lower decay times for the FE and DBE in the homoepitaxial layers, compared to previously studied heteroepitaxial samples, is tentatively ascribed to the much lower dislocation density in the homoepitaxial layers, which suppresses the gettering of nonradiative point defects.
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