Abstract
The decay time of excitons bound to neutral acceptors (I 1 line) appearing in low temperature ZnS films on GaAs (100) substrates grown by vapor phase epitaxy was measured for the first time with the use of a streak camera. The measured decay time of ≈ 190 ps agreed with a value calculated by the giant oscillator strength model. Under tunable (3.7−3.9 eV) picosecond light pulse excitations, resonant enhancements of Raman scattering intensities were seen for LO-, 2LO-, 3LO-, TO- and 2TO-phonon lines. The dependence of 2LO-phonon Raman line intensity on excitation photon energy showed resonance enhancements with free and bound exciton states.
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