Abstract
The properties of Erbium Doped Waveguide Amplifiers (EDWA) based on slot waveguides in silicon photonics are investigated by a general rate equation model. The obtained results, based on a 1.48µm pumping scheme, highlight a very important feature regarding the Excited State Absorption process. Optimization of the slot waveguide cross-section first allows enhancing the gain mechanism but more importantly, it points out that increasing the pump power (PP) above 100mW counterintuitively hinders the optical gain and that optimum performance is obtained for PP as low as around 35mW.
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