Abstract
Spectral dependences of THz radiation from laser-illuminated surfaces of InAs and InSb have been investigated experimentally at high optical fluences for laser wavelengths ranging from 0.6μm to 2μm. Efficient THz generation was discovered in the excitation range around 1.6μm. The influence of inter-valley scattering was evident. The energy position of subsidiary conduction band valleys was evaluated to be equal to 1.08eV and 0.53eV for InAs and InSb, respectively.
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