Excitation power and barrier width dependence of photoluminescence in piezoelectric multiquantum well p-i-n structures

Abstract

Strained InGaAs/GaAs multiquantum well (MQW) structures grown on (111)B GaAs sub- strates incorporate strong internal piezoelectric fields. In contrast to (100)-oriented MQW p-i-n structures, the room temperature photoluminescence (PL) peak position and lineshape depend on the barrier width, which controls the ‘‘envelope field’’ across the MQW. The complex behavior of the PL peak position with excitation power results from a competition between screening of the well and envelope fields, and the photovoltaic effect.