Abstract
We have performed a comparative study of B re-distribution and electrical activation after excimer laser annealing (ELA) of B and BF 2 implanted Si. Chemical B concentration and electrical activation profiles were measured by secondary ion mass spectrometry (SIMS) and spreading resistance profiling (SRP), respectively. SIMS data demonstrate that the presence of F does not influence significantly the re-distribution of B during ELA. A dramatic contrast, however, can be observed in the electrical activation of the dopant in the B and BF 2 implanted samples. While almost 100% electrical activation of B occurs in the B implanted samples, only 20–50% of the dopant can be activated by ELA in the BF 2 implanted sample. Possible mechanisms causing the deactivation of B in the BF 2 implanted samples after ELA are discussed.
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