Abstract
We express the exchange and correlation potential analytically in terms of the Hartree potential in the Thomas-Fermi approximation. This result permits the inclusion of the exchange and correlation effects in a semi-empirical tight binding model considering the Hartree-Fock potential as an external one. We simply add this potential to the diagonal elements of the Hamiltonian matrix. As an example, we calculate the electronic spectrum of Si δ-doped quantum wells in GaAs taking into account the exchange and correlation effects. Our results agree quite well with the self-consistent calculations published previously and with the experimental results available for this system.
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