Abstract
In this work, we present a novel oxide grown on polysilicon by room-temperature anodic oxidation (anodic polyoxide). The anodic polyoxide exhibits excellent electrical characteristics, i.e. low leakage current, high dielectric breakdown field, high effective electron barrier height, extremely low electron trapping rate, high charge-to-breakdown, and long lifetime. These, together with its low-cost and low thermal-budget features, make it very attractive for inter-poly oxide in future high-density nonvolatile memory applications.
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