Abstract
We present an experimental investigation of the optoelectronic response of single and multiple quantum well systems to pulsed laser radiation provided by mid-infrared free-electron lasers (FELs). It is demonstrated that using mid-infrared FELs as intense laser radiation sources, AlGaAs/GaAs-based quantum-well infrared detectors can be examined electrically through conventional photo-resistance measurements carried out even at room-temperature for high-mobility devices. This work is pertinent to applications of the recently developed infrared FEL radiation sources in the investigations into low-dimensional semiconductor systems and semiconductor nanostructures.We present an experimental investigation of the optoelectronic response of single and multiple quantum well systems to pulsed laser radiation provided by mid-infrared free-electron lasers (FELs). It is demonstrated that using mid-infrared FELs as intense laser radiation sources, AlGaAs/GaAs-based quantum-well infrared detectors can be examined electrically through conventional photo-resistance measurements carried out even at room-temperature for high-mobility devices. This work is pertinent to applications of the recently developed infrared FEL radiation sources in the investigations into low-dimensional semiconductor systems and semiconductor nanostructures.
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