Abstract
Reactivity of silicon substrates in hydrogen and methane gaseous mixtures has been studied by means of in-situ differential reflectivity measurements, in a hot filament assisted chemical vapour deposition reactor. Reflectivity changes have been related to substrate etching by atomic hydrogen, and to carbon deposition. Comparison of the results obtained on substrates scratched with diamond paste (on which diamond growth takes place) and on unscratched ones (no diamond growth) has allowed us to evidence reflectivity changes specific to the diamond formation.
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