Abstract
The evolution of the antiferromagnetism vector of multiferroic BiFeO3 during switching of its ferroelectric polarization by an electric field has been studied by numerical simulation in the framework of the phenomenological model for the magnetic anisotropy energy. Optimal variants have been found for the cut of electrosensitive BiFeO3 layer, the deformation induced by a substrate, and the direction of applying electric field for the development of prototypes of new-generation marnetoresistive memory.
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