Abstract
The characteristics of interband and exponential optical absorption of leucosapphire and polycrystalline corundum (polycor) after irradiation with chromium ions and subsequent annealing in vacuum at 300–1800 K and in air at 300–800 K are studied. Contributions of defects with different thermal and chemical stability into optical parameters were established. The effect of intrinsic radiation defects, of substitutional defects and of complexes on base of oxygen and defects on formation the focal point in absorption spectra owing to fulfilment of the Urbach rule was determined. Heating in air of strongly defective material synthesized in surface layers of alumina by the ion–heat modification influences the characteristics of defects and the electronic structure of band gap negligibly.
Highlights
The application of irradiation with ions for the modification of properties of dielectric materials stimulates studying the radiation damage processes and the changes in their electronic structure [1,2,3,4,5,6]
The aim of this paper is to study the characteristics of the optical absorption of leucosapphire and polycor after irradiation with chromium ions Crn+ and subsequent annealing in vacuum and in air, to determine the thermal and chemical stability of the defects of different nature and to determine the degree of their influence on the optical properties
Annealing in air of alumina after irradiation with chromium ions and subsequent annealing in vacuum changes characteristics of the energetic levels induced by the radiation defects (RDs) and complexes on their base
Summary
The application of irradiation with ions for the modification of properties of dielectric materials stimulates studying the radiation damage processes and the changes in their electronic structure [1,2,3,4,5,6]. Thermal annealing in vacuum and in reducing atmosphere stabilizes the properties of material owing to coagulation of implanted elements into clusters and formation of new phases, having characteristics different from those for pristine matrix [2, 4]. Thermal annealing in oxygen– containing environment influences the electronic structure of material owing to realization oxidative and restoration reactions with participation of defects and oxygen and formation of oxygen–containing complexes (OCCs) [3, 4]. The implantation of ions with different ability to substitute for lattice atoms of Al2O3 and to form the solid solutions allows evaluating of their role in changing of properties [1,2,3,4,5,6]
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