Abstract
The electrochemical metallization cell, also referred to as conductive bridge random access memory, is considered to be a promising candidate or complementary component to the traditional charge based memory. As such, it is receiving additional focus to accelerate the commercialization process. To create a successful mass product, reliability issues must first be rigorously solved. In-depth understanding of the failure behavior of the ECM is essential for performance optimization. Here, we reveal the degradation of high resistance state behaves as the majority cases of the endurance failure of the HfO2 electrolyte based ECM cell. High resolution transmission electron microscopy was used to characterize the change in filament nature after repetitive switching cycles. The result showed that Cu accumulation inside the filament played a dominant role in switching failure, which was further supported by measuring the retention of cycle dependent high resistance state and low resistance state. The clarified physical picture of filament evolution provides a basic understanding of the mechanisms of endurance and retention failure, and the relationship between them. Based on these results, applicable approaches for performance optimization can be implicatively developed, ranging from material tailoring to structure engineering and algorithm design.
Highlights
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory
The gates of the regularly-arranged transistors were connected by a wordline (WL) in row and the top electrodes (TE) of the electrochemical metallization cells (ECM) cells were linked by a bitline (BL) in column
A positive voltage bias was applied on bottom electrode (BE) for the forming and SET operation, whereas for the RESET operation, the TE was positively biased
Summary
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory. The clarified physical picture of filament evolution provides a basic understanding of the mechanisms of endurance and retention failure, and the relationship between them Based on these results, applicable approaches for performance optimization can be implicatively developed, ranging from material tailoring to structure engineering and algorithm design. Chalcogenides such as sulphides[10], iodides[11], selenides[12] and tellurides[13], were used as ECM switching materials These materials showed very promising performance except the ultra-low switching voltage, which allowed small thermal and electrical noises to disturb the resistance state. HRTEM characterization revealed that the copper concentration inside the filament increased in the failed device, whereas the filament size was slightly affected This finding was further supported by cycle dependent HRS and low resistance state (LRS) retention measurements. The results presented here provide a basic understanding of the mechanisms of endurance and retention failure and the relationships between them
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