Abstract

The existence of two distinct crystalline phases viz., Si2Te3 and SiTe2, in the Si–Te system is established from differential thermal analysis (DTA) studies. Thermo-gravimetric (TG) data on SiTe2 indicate that the compound decomposes to Si in multiple steps via intermediate Si2Te3 phase. X-ray diffraction (XRD) reveals that SiTe2 crystallizes in P3̅m1 space group with CdI2 trigonal structure, whereas Si2Te3 crystallizes in trigonal structure with space group P3̅1c with varying occupation of octahedral voids. Single Si atoms fill only 1/2 of the octahedral voids in SiTe2 structure whereas in Si2Te3, Si atoms are arranged in pairs occupying 2/3 of the octahedral voids in alternating planes along c-axis. Further, X-ray absorption near edge structure (XANES) and X-ray photoelectron spectroscopy (XPS) confirm the distinctness of the chemical environment in the two crystalline structures confirming the uniqueness of both the phases. DTA results on the two compounds indicate the presence of one crystallographic phase-transition in each of the compound with transition temperatures at 441°C for Si2Te3 and 392°C for SiTe2. At the same time both Si2Te3 and SiTe2 undergo peritectic decomposition at 683°C and 432°C forming [Si(s)+Te(liq)] and [α-Si2Te3(s)+Te(liq)], respectively. The system revealed eutectic reaction between β-SiTe2 and Te at 398°C [L=Te+SiTe2]. Consequently, the phase diagram in the Si–Te system has been delineated.

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