Abstract
This report shows for the first time the simultanous growth of InP/GaInAsP heterostructures having vertical and horizontal interfaces, demonstrated with multi (5) quantum well structures. The surface selective growth (SSG) in metalorganic MBE (MOMBE or CBE) enables on the one hand selective area epitaxy and on the other hand it allows to obtain vertical side walls at selectively grown structures. In addition SSG can provoke that the GaInAsP material composition is different on horizontal (100) and vertical (01 1 ) planes. This effect is utilized in order to allocate the results from focused photoluminescence measurements to the different types of superlattices. It is discussed that the proposed growth technique includes an attractive way to produce quantum wire systems besides the realization of vertical superlatices.
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