Abstract
The formation of Sb-H complexes in n-type Si after the induction of H by low-energy implantation has been investigated using Sb-119 --> Sn-119 source Mossbauer spectroscopy. We have studied the different Mossbauer fractions as a function of H- and Sb-dose and as a function of H-implantation temperature. We can explain our results by assuming thermal equilibrium between Sb-H complexes and clustered H-2(*) pairs, attributing the visible hydrogen associated fraction to SbH and the ''invisible fraction to SbH2 complexes. The results show that the binding energy of hydrogen in these three forms differ only by about 0.1 eV, being the highest for H-2(*) and the lowest for SbH.
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