Abstract
This paper describes the electrical properties of three n-type InP epilayers grown by MOVPE, in the same reactor, with three different bottles of trimethvlindium. Two typical samples show a reduced room temperature Hall mobility along with high temperature excitation to the conduction band. These features are in excellent agreement with a model accounting for a deep center or complex, with a binding energy dependent on the particular source material used for growth. Such a center is a strong scatterer when ionized, thus reducing high temperature mobility and becoming electrically inactive when neutral. The 77 K Hall mobility of the samples is not a measure of their purity and possible depletion effects did not appear to be significant.
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