Abstract
We report on current transport through AlAs GaAs double quantum well heterostructures s a function of the width of the barrier separating the two wells. We compare the current-voltage characteristics of a 108 Å quantum well with those of devices consisting of two 54 Å wells separated by a thin AlAs barrier. For the thinnest central barriers the peak current densities in the structures are unaffected, and there is a sharp increase in the triple barriers' peak-to-valley current ratio as compared to the double barrier diode. When the middle barrier's thickness is increased beyond a certain width there is a dramatic drop in the number and intensity of the resonances indicating that the coherent interaction between the states in the two wells is lost.
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