Abstract
We describe further progress of a previously reported novel crystallization temperature (Tx) measurement method applicable for small sample sizes. The method uses thermography and detects Tx as a change in emissivity of thin film amorphous alloy samples. We applied this method to various sample configurations of Pd–Cu–Si thin film metallic glass (TFMG). The validity of the detected Tx was determined by electrical resistivity monitoring and differential scanning calorimetry (DSC). Crystallization temperature can be detected in all sample configurations; however, it was found that the magnitude of the detected change of emissivity at Tx depended on the sample configuration. This emissivity change was clear in the absence of a higher emissivity material. The results suggest that this method can achieve high-throughput characterization of Tx for integrated small samples such as in a thin film library.
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