Abstract
To evaluate the performance correlated imperfection or defect features of metamorphic InGaAs photodetector structures, a scanning electron microscopy scheme including both plane-view electron beam induced current (EBIC) and secondary electron (SE) images have been used. The abilities, merits and limitations as well as some case-dependent properties of EBIC have been discussed in detail. The devices of similar structures grown on InP or GaAs substrates with quite different lattice mismatch show discriminated defect distribution patterns, prompting their distinct origins, which have been confirmed by cross-sectional transmission electron microscopy observation. Using self-developed image processing software the EBIC features of the samples are statistically analyzed, which validated the qualitative correlation between the EBIC data and device dark current. Fusing of EBIC and SE images has also been attempted to enhance the defect visibility. Results indicate that EBIC is feasible to investigate the effects of defects on the device performance not only in research work, but also for product quality monitor purposes.
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