Abstract
AbstractCast‐grown mono‐like Si ingots for photovoltaic application are getting increasing attention due to the possibility of obtaining highly efficient solar cells at a low‐cost production process. The reduction of crystallographic defects is essential to reach that potential. In this study, the residual strain and dislocation distribution in monolike ingots grown by directional solidification was experimentally determined. It was found that both strain and dislocations are mainly concentrated in the periphery of the ingots (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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