Abstract
Al x Ga 1− x As/GaAs heterostructures (0.15 ≤ x ≤ 0.4) have been studied using Secondary Ion Mass Spectrometry (SIMS) and Sputtered Neutral Mass Spectrometry (SNMS) techniques. A thin MQW structure was also investigated. Both techniques give a good quantification of the constituent elements in these systems, provided that standard samples are available. It is shown that SNMS provides a tool for quantitative evaluation of the matrix effect in SIMS measurements. In addition, a standardless method for the determination of the Ga content in Al x Ga 1− x As/GaAs heterostructures by means of SNMS is proposed.
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