Abstract
The hole trapping characteristics of two conditions of silicon nitride films with only empty trap centers and with both trap centers filled by electrons and empty trap centers were investigated. In addition, the constant-current hole injection method was presented to count the number of holes injected to the silicon nitride film in MONOS (Metal-oxide-nitride-oxide-semiconductor)-type memory capacitors. After a large number of holes were injected to the silicon nitride film, the flat-band voltage in the MONOS memory capacitor with both trap centers filled by electrons and empty trap centers clearly coincided to that with only empty trap centers. This result indicates that almost all trapped electrons could not remain in trap centers and were eliminated from the silicon nitride film after a large number of holes were injected. The electrons trapped in the silicon nitride films in this study were unstable against holes.
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