Abstract

Registration accuracy, as well as resolution capability, is one of the critical factors to identify an appropriate lithography tool. For deep submicron devices represented by the 256 Mbit dynamic random access memory, an alignment accuracy of better than 30 nm is needed. In this article, the alignment accuracy of an x-ray stepper was evaluated using the double-exposure method with a posiresist. The alignment accuracy obtained was better than 38 nm (3σ). Moreover, making a quantitative analysis of alignment error factors, we identified the possibility of improvement toward better than 30 nm (3σ).

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.