Abstract
AbstractEllipsometric porosimetry (EP) has recently appeared to be a suitable non‐destructive technique for the characterization of porous ultra low‐κ (ULK) dielectrics. The analysis of ellipsometric spectra of a film during adsorption and desorption cycles of an adsorptive, allows the determination of its open pore fraction, pore size distribution, refractive index and thickness. Several issues are encountered when integrating low‐κ materials as inter‐metal dielectrics (IMD) in the CMOS architecture such as the deposition monitoring, the pore sealing efficiency and the process induced damages. In this study we focus on the capabilities of EP to characterize ULK materials and their integration processes. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Highlights
Complementary metal oxide semiconductor (CMOS) down scaling requires new materials for advanced interconnects to reduce resistancecapacitance delay
While ellipsometry is a common technique performed in microelectronics clean rooms, Ellipsometric Porosimetry (EP) is still under evaluation to become an in-line characterization method
In this study we focus on the assessment of an EP equipment, installed in a clean room environment, and its ability to suit the characterization needs of 200 and 300 mm ultra low-κ process integration schemes
Summary
Complementary metal oxide semiconductor (CMOS) down scaling requires new materials for advanced interconnects to reduce resistancecapacitance delay. The analysis of ellipsometric spectra of a film during adsorption and desorption cycles of an adsorptive, allows the determination of its open pore fraction, pore size distribution, refractive index and thickness. Several issues are encountered when integrating low-κ materials as inter-metal dielectrics (IMD) in the CMOS architecture such as the deposition monitoring, the pore sealing efficiency and the process induced damages.
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