Abstract
We studied the interaction of four different window layer combinations in Cu(In,Ga)Se2 solar cells. Intrinsic ZnO (i-ZnO) layers were grown on CdS by either chemical vapor deposition (CVD) or magnetron sputtering. These were combined with sputtered ZnO:Al or In2O3:H grown by atomic layer deposition as transparent conducting oxides (TCO). It was found that the thickness of the CVD i-ZnO layer affects the open circuit voltage (Voc) significantly when using In2O3:H as TCO. The Voc dropped by roughly 30mV when the i-ZnO thickness was increased from 20 to 160nm. This detrimental effect on Voc was not as prominent when a ZnO:Al TCO was used, where the corresponding decrease was in the range of 5 to 10mV. In addition, the Voc drop for the CVD i-ZnO/In2O3:H structure was not observed when using the sputtered i-ZnO layer. Furthermore, large fill factor variations were observed when using the In2O3:H TCO without an i-ZnO layer underneath, where already a thin (20nm) CVD i-ZnO layer mitigated this effect. Device simulations were applied to explain the experimentally observed Voc trends.
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