Abstract
As the next generation of power electronics begins to turn to wide bandgap (WBG) power devices, such as gallium nitride (GaN) and silicon carbide (SiC), continued study and innovation in this area is required to take full advantage of all of their inherent benefits. While some advertised benefits of WBG devices are increased efficiency and switching frequency, one tradeoff is an increase in conducted common mode (CM) electromagnetic interference (EMI). In motor drive applications, this is a significant issue and must be addressed. To mitigate this issue, a novel three phase inverter topology for CM EMI reduction is presented in this paper. The performance of the novel topology is evaluated for both GaN and Si devices in various operating conditions utilizing LTSpice simulation software. To verify these results, a prototype of the novel inverter is also built and tested.
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