Abstract
We investigated the coupling strength between electron–hole pairs and phonons in a silicon light emitting diode (Si-LED) fabricated by dressed-photon-assisted annealing. This Si-LED emitted light in the 1.4 eV photon energy (0.9 μm wavelength) band, and phonon sidebands were observed in the emission spectrum. From a comparison with simulation results, these sidebands were found to be due to coupling of electron–hole pairs with LO-mode and TO-mode coherent phonons via dressed-photon–phonons. The value of the Huang–Rhys factor, \(S\), representing the coupling strength between the electron–hole pairs and the phonons was estimated to be \(4.08 \pm 0.02\).
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