Abstract
The results of the creation of a high-temperature spin injector based on EuO: Fe composite material are discussed. Their magnetic, electrical, structural and resonance parameters are given in a wide range of temperatures and an external magnetic field. A model calculation of the electronic spectrum of the solid solution Eu–Fe–O, responsible for the manifestation of the outstanding properties of the composite, is performed. The possibility of creating semiconductor spin electronics devices capable of operating at room temperature is shown.
Highlights
In the practice of creating real spintronic structures and spin transistors of cryogenics, as is known, so-called dilute magnetic semiconductors (DMS) are widely used
Where are: Asd is an integral of s-d – exchange for conduction electrons; x is the concentration of the Mn magnetic ions; S0 is their effective spin; Bs is the Brillouin function; μB is Bor’s magnetron; Teff is the effective spin temperature of magnetic ions; s is the spin of the charge carriers
The same value of U = 5 eV was proposed for 4f- and 5d-orbitals of europium in [34] devoted to the calculation of the EuO band structure with allowance for correlation corrections. By varying these values within 1 eV near the value indicated above, we found that the optimal values for the europium orbitals are U(4f) = 5.5 eV and U(5d) = 5 eV, leading to a good agreement between the results of band calculations and the above experimental data
Summary
In the practice of creating real spintronic structures and spin transistors of cryogenics, as is known, so-called dilute magnetic semiconductors (DMS) are widely used. EuO films obtained by the MBE method and containing a small (up to 5% by weight) percent of the impurity of these ferromagnetic metals had Curie temperatures of Tc = 150–180 K, remaining quasi-degenerate semiconductors In this case, the synthesis of a possible high-temperature spintronic (EuO) : Fey assumed the final product in the form of a composite – a multiphase and magneto-heterogeneous material – in advance. Measurements of the nominal electrical resistivity of the composite were carried out at sintered samples of rectangular shape at room temperatures According to these data (Fig. 1), the area of the composite compositions corresponding to the semiconductor character of their conductivity was determined and comprised from 15 to ~25% of Fe mass in a mixture with EuO.
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