Abstract
Chemical treatments of the (111) GaP surface were investigated. The investigations were carried out using scanning electron microscopy, ellipsometry and Schottky barrier characterization. A 1HCl: 1HNO 3: 1CH 3COOH etchant was developed as the most suitable for polishing etching. It provided damage-free GaP surfaces with minimum residual oxide (18 Å) and nearly ideal Schottky barrier characteristics. A complex chemical treatment was required for the removal of a thick surface layer from the GaP crystals. It consisted of aqua regia etching followed by etching with 1HCl:1HNO 3:1CH 3COOH, 1HCl:3HNO 3:2CH 3COOH:3HClO 4 or 1K 3Fe(CN) 6:3KOH:60H 2O.
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