Abstract
Etching of thermal SiO2 using the HF/pyridine complex in supercritical CO2 (scCO2) was studied. Etch rate increases when HF concentration, processing temperature and fluid flow rates are increased. The decrease of the instantaneous etch rate as the processing time increases is attributed to the formation of etching residues on the film surface that act as a diffusion barrier. These residues are soluble in water and are identified as (Pyr)2SiF4 by FTIR analysis. For similar nominal HF concentrations, the SiO2 etch rate in anhydrous pyridine/scCO2 is much higher than in H2O.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
