Abstract
Single‐crystal SiC etching in an inductively coupled plasma (ICP) chamber using a gas mixture of has been investigated for the first time. The dependence of etch rate on ICP power, substrate dc bias, and oxygen percentage was studied. It is found that etch rate increases with ICP power and substrate dc bias, and an etch rate exceeding 200 nm/min can be obtained at −100 V substrate dc bias. The etch rate is as high as 20 nm/min, even when there is no substrate bias. Clean and smooth surfaces can be obtained readily. Trenches with different depths were etched and their profiles were examined by scanning electron microscopy.
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