Abstract
A novel integrated optical ultrasound sensor based on silicon-on-insulator (SOI) platform is proposed, theoretically analyzed and experimentally demonstrated. By using a selectively etched SOI microring resonator in an add-drop structure, the technique provides a linear and distortion-free sensing response to the ultrasound signal as it prevents the coupling region deformation and removes variations from the power fluctuation of the optical source. The proof-of-concept experimental demonstration of the proposed sensor shows the detection of air-coupled ultrasound pressure at different frequencies and magnitudes, a frequency sensing resolution of 30 Hz and a wide acceptance angle around 75 degrees.
Highlights
Utrasound sensor devices, which allow detection and imaging using acoustic waves, have found many applications in biomedical imaging, object recognition and structural health monitoring [1]–[4]
We propose and demonstrate a new ultrasound sensor based on a selectively etched add-drop microring resonator structure to provide a linear and distortion-free response to the ultrasound signal by preventing the coupling region deformation and removing variations from the power fluctuation of the optical source
As a proof of concept, we demonstrate an ultrasound sensor fabricated through the CMOS-compatible SOI platform experimentally showing the detection of air-coupled ultrasound pressure of 4 Pa, a frequency sensing resolution of 30 Hz and a wide acceptance angle around 75 degrees
Summary
Utrasound sensor devices, which allow detection and imaging using acoustic waves, have found many applications in biomedical imaging, object recognition and structural health monitoring [1]–[4]. We propose and demonstrate a new ultrasound sensor based on a selectively etched add-drop microring resonator structure to provide a linear and distortion-free response to the ultrasound signal by preventing the coupling region deformation and removing variations from the power fluctuation of the optical source. This is achieved via selectively etching the targeted region of the silicon microring to enhance the ultrasound-induced mechanical deformation while the coupling regions remain unetched to ensure the coupling coefficient of the sensor is ultrasound insensitive. As a proof of concept, we demonstrate an ultrasound sensor fabricated through the CMOS-compatible SOI platform experimentally showing the detection of air-coupled ultrasound pressure of 4 Pa, a frequency sensing resolution of 30 Hz and a wide acceptance angle around 75 degrees
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